Crystalline 3C-SiC Deposited by PLD Using Different Manufactured Targets

Nowadays crystalline Silicon Carbide (SiC) thin films are promising coatings for high-temperature, high-power and high-frequency electronic devices as well as for optical (for Infrared and Extreme Ultraviolet, EUV) and optoelectronic applications because of its physical and electrical properties. We have deposited Silicon Carbides thin film for by means of Pulsed Laser Deposition (PLD) in off‐axis geometry to obtain crystalline 3C-SiC using two different target such as hot-pressed SiC and crystalline 3C-SiC on Silicon (100) and Silicon (111) substrates. At high temperature, and in the same deposition condition such as target-substrate distance, laser fluence, repetition rate, the resulted films are quite different resulting dependent from the target and the substrates, being polycrystalline with the hot-pressed target and oriented nanocrystalline when using the 3C-SiC crystalline target. The films have been characterized by means of Atomic Force microscopy (AFM), Scanning Electron Microscopy (SEM), Infrared Transmittance and EUV reflectance.