The aim of this paper is to sistematically study dispersion effects in various InP HEMT technologies, with and without InP etch-stop, and with different recess widths, by means of a wide set of techniques, including frequency transconductance dispersion, gate-lag and drain-lag transient measurements, current Deep Level Transient Spectroscopy (DLTS). Results demonstrate that two-step recess devices adopting InP etch-stop layer and optimized Schottky contact on InAlAs are free from dispersive and kink effects even with very wide gate recess widths (400 nm) and extremely short gate lengths (30 nm).
Frequency transconductance and Gate-Lag dispersion in InAlAs/InGaAs/InP HEMTs
MENEGHESSO, GAUDENZIO;RAMPAZZO, FABIANA;PIEROBON, ROBERTO;ZANONI, ENRICO;
2003
Abstract
The aim of this paper is to sistematically study dispersion effects in various InP HEMT technologies, with and without InP etch-stop, and with different recess widths, by means of a wide set of techniques, including frequency transconductance dispersion, gate-lag and drain-lag transient measurements, current Deep Level Transient Spectroscopy (DLTS). Results demonstrate that two-step recess devices adopting InP etch-stop layer and optimized Schottky contact on InAlAs are free from dispersive and kink effects even with very wide gate recess widths (400 nm) and extremely short gate lengths (30 nm).File in questo prodotto:
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