New results on the ESD sensitivity of 65-nm Fully Depleted SOI MOSFETs are presented. The role of material and structure in the response to ESD stresses was analyzed. The criterion to detect the failure condition was also investigated.
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques
GRIFFONI, ALESSIO;TAZZOLI, AUGUSTO;GERARDIN, SIMONE;MENEGHESSO, GAUDENZIO
2008
Abstract
New results on the ESD sensitivity of 65-nm Fully Depleted SOI MOSFETs are presented. The role of material and structure in the response to ESD stresses was analyzed. The criterion to detect the failure condition was also investigated.File in questo prodotto:
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