In this work, the electrical conduction of irradiated thin SiO2 gate oxides of MOS structures has been analyzed at a nanometer scale with a Conductive Atomic Force Microscope (C-AFM). The results have been compared to those obtained on fresh and electrically stressed oxides, demonstrating the capability of the technique to evaluate the electrical damage induced during irradiation.

Electrical characterization at nanometer scale of weak spots in irradiated SiO2 gate oxides

CESTER, ANDREA;PACCAGNELLA, ALESSANDRO;
2004

Abstract

In this work, the electrical conduction of irradiated thin SiO2 gate oxides of MOS structures has been analyzed at a nanometer scale with a Conductive Atomic Force Microscope (C-AFM). The results have been compared to those obtained on fresh and electrically stressed oxides, demonstrating the capability of the technique to evaluate the electrical damage induced during irradiation.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2440949
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