Hybrid silica-based SiOxCyHz thin films were deposited via plasma enhanced-chemical vapor deposition PE-CVD on SiO2, Si(100) and Cu substrates starting from tetramethoxysilane TMOS as precursor compound. Depositions were performed from Ar/TMOS plasmas in the absence of oxidizing gases at temperatures as low as 60 °C. In particular, the dependence of the system composition, structure, morphology and optical properties on the applied rf-power from 20 to 80 W was investigated in detail. This work is devoted to the XPS x-ray photoelectron spectroscopy characterization of a representative SiOxCyHz thin film supported on Si(1l00) and synthesized at 80W, with particular regard to the origin of the organic residuals incorporated in the obtained hybrid material.
Silica-based thin films by PE-CVD: an XPS characterization
GASPAROTTO, ALBERTO;MACCATO, CHIARA;MARAGNO, CINZIA;TONDELLO, EUGENIO
2006
Abstract
Hybrid silica-based SiOxCyHz thin films were deposited via plasma enhanced-chemical vapor deposition PE-CVD on SiO2, Si(100) and Cu substrates starting from tetramethoxysilane TMOS as precursor compound. Depositions were performed from Ar/TMOS plasmas in the absence of oxidizing gases at temperatures as low as 60 °C. In particular, the dependence of the system composition, structure, morphology and optical properties on the applied rf-power from 20 to 80 W was investigated in detail. This work is devoted to the XPS x-ray photoelectron spectroscopy characterization of a representative SiOxCyHz thin film supported on Si(1l00) and synthesized at 80W, with particular regard to the origin of the organic residuals incorporated in the obtained hybrid material.Pubblicazioni consigliate
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