Long term on-state and off-state stress on GaN/AlGaN/GaN HEMTs on SiC substrates are presented. Hot carrier effects and their dependence on bias conditions are evaluated with electroluminescence measurements. Both hot-electron stress conditions produce drain current gate-lag dispersion and gate current decrease. However on- and off- state stresses induce degradation in different gate-to drain surface device regions, i.e. close to the drain contact for the on-state stress and close to the gate contact in the off - state stress. Furthermore a correlation between gate-leakage current and gate-lag dispersion is also observed.

Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC

MENEGHESSO, GAUDENZIO;PIEROBON, ROBERTO;RAMPAZZO, FABIANA;TAMIAZZO, GIANLUCA;ZANONI, ENRICO;
2005

Abstract

Long term on-state and off-state stress on GaN/AlGaN/GaN HEMTs on SiC substrates are presented. Hot carrier effects and their dependence on bias conditions are evaluated with electroluminescence measurements. Both hot-electron stress conditions produce drain current gate-lag dispersion and gate current decrease. However on- and off- state stresses induce degradation in different gate-to drain surface device regions, i.e. close to the drain contact for the on-state stress and close to the gate contact in the off - state stress. Furthermore a correlation between gate-leakage current and gate-lag dispersion is also observed.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2441734
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