In this work we investigate the impact of MOSFET degradation on the operation of real circuits through SPICE simulation. We show that by changing a few parameters in a LEVEL 3 model it is possible to reasonably account for the degradation in the characteristics of a single device following electrical stress. We then validate this approach on a simple circuit, a current mirror, and finally analyze the degradation of a more complex one, a voltage controlled oscillator.
Modeling MOSFET and circuit degradation through SPICE
CESTER, ANDREA;GERARDIN, SIMONE;PACCAGNELLA, ALESSANDRO;
2005
Abstract
In this work we investigate the impact of MOSFET degradation on the operation of real circuits through SPICE simulation. We show that by changing a few parameters in a LEVEL 3 model it is possible to reasonably account for the degradation in the characteristics of a single device following electrical stress. We then validate this approach on a simple circuit, a current mirror, and finally analyze the degradation of a more complex one, a voltage controlled oscillator.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
