We have developed and analyzed two alternative devices for the manufacture of high-density ICs, each of which is a FET that develop contemporarily the function of two classical transistors, allowing notably advantages in the realization of SRAM and logic circuits. We tested the effective functionality of these devices through Synopsys TCAD tools. We also extracted for each one of these a full set of electrical equations.
Alternative MOS Devices for the Manufacture of High-Density ICs
MARINO, FABIO ALESSIO;MENEGHESSO, GAUDENZIO
2007
Abstract
We have developed and analyzed two alternative devices for the manufacture of high-density ICs, each of which is a FET that develop contemporarily the function of two classical transistors, allowing notably advantages in the realization of SRAM and logic circuits. We tested the effective functionality of these devices through Synopsys TCAD tools. We also extracted for each one of these a full set of electrical equations.File in questo prodotto:
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