Nanocrystalline lanthanum oxyfluoride thin films were synthesized by chemical vapor deposition (CVD) using La(hfa)3(diglyme) (hfa=1,1,1,5,5,5-hexafluoro-2,4-pentanedionate; diglyme=bis(2-metoxyethyl)ether) as precursor compound. The coatings were deposited on Si(100) and commercial silica slides in nitrogen+wet oxygen atmospheres, at temperatures between 200 and 500 °C, with particular attention to the structural and compositional evolution as a function of the synthesis conditions and growth surface. The obtained samples were characterized by glancingincidence x-ray diffraction (GIXRD), secondary ion mass spectrometry (SIMS), x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), for a detailed determination of their microstructure, chemical composition, and surface morphology. This work is dedicated to the XPS characterization of a representative LaOF thin film deposited on Si(100) at 500 °C. Besides the wide scan spectrum, detailed spectra for the La 3d, F 1s, O 1s, and C 1s regions and related data are presented and discussed. Both the F/La atomic ratio and La 3d peak shape and position point to the formation of stoichiometric LaOF thin films. Moreover, carbon contamination was merely limited to the outermost sample layers.

Nanocrystalline lanthanum oxyfluoride thin films by XPS

GASPAROTTO, ALBERTO;MARAGNO, CINZIA;TONDELLO, EUGENIO
2004

Abstract

Nanocrystalline lanthanum oxyfluoride thin films were synthesized by chemical vapor deposition (CVD) using La(hfa)3(diglyme) (hfa=1,1,1,5,5,5-hexafluoro-2,4-pentanedionate; diglyme=bis(2-metoxyethyl)ether) as precursor compound. The coatings were deposited on Si(100) and commercial silica slides in nitrogen+wet oxygen atmospheres, at temperatures between 200 and 500 °C, with particular attention to the structural and compositional evolution as a function of the synthesis conditions and growth surface. The obtained samples were characterized by glancingincidence x-ray diffraction (GIXRD), secondary ion mass spectrometry (SIMS), x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), for a detailed determination of their microstructure, chemical composition, and surface morphology. This work is dedicated to the XPS characterization of a representative LaOF thin film deposited on Si(100) at 500 °C. Besides the wide scan spectrum, detailed spectra for the La 3d, F 1s, O 1s, and C 1s regions and related data are presented and discussed. Both the F/La atomic ratio and La 3d peak shape and position point to the formation of stoichiometric LaOF thin films. Moreover, carbon contamination was merely limited to the outermost sample layers.
2004
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2450548
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