Nanocrystalline CeO2 thin films were synthesized by Plasma-Enhanced Chemical Vapor Deposition using Ce(dpm)4 as precursor. Film growth was accomplished at 150-300°C either in Ar or in Ar-O2 plasmas on SiO2 and Si(100) with the aim of studying the effects of substrate temperature and O2 content on coating characteristics. Film microstructure as a function of the synthesis conditions was investigated by Glancing Incidence X-Ray Diffraction (GIXRD) and Transmission Electron Microscopy (TEM), while surface morphology was analyzed by Atomic Force Microscopy (AFM). Surface and in-depth chemical composition was studied by X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS).
Initial growth stages of CeO2 nanosystems by Plasma-Enhanced Chemical Vapor Deposition
GASPAROTTO, ALBERTO;TONDELLO, EUGENIO;SADA, CINZIA;
2003
Abstract
Nanocrystalline CeO2 thin films were synthesized by Plasma-Enhanced Chemical Vapor Deposition using Ce(dpm)4 as precursor. Film growth was accomplished at 150-300°C either in Ar or in Ar-O2 plasmas on SiO2 and Si(100) with the aim of studying the effects of substrate temperature and O2 content on coating characteristics. Film microstructure as a function of the synthesis conditions was investigated by Glancing Incidence X-Ray Diffraction (GIXRD) and Transmission Electron Microscopy (TEM), while surface morphology was analyzed by Atomic Force Microscopy (AFM). Surface and in-depth chemical composition was studied by X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS).Pubblicazioni consigliate
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