This Tutorial will review failure modes and mechanisms of GaN HEMTs, identified within the framework of various accelerated tests, including step-stress short tests (< 150 hours) and life tests with a duration exceeding 3000 hours. The proposed methodology includes a detailed characterization of DC electrical characteristics, and analysis of trapping effects by means of pulsed measurements (gate-lag and drain- and gate-double pulse). The observed failure modes are subsequently analyzed by two-dimensional device simulations, in order to validate hypotheses on physical failure mechanisms. Electroluminescence microscopy and spectroscopy is adopted to evaluate hot carrier effects in GaN HEMTs, and as a powerful failure analysis tool, see among others
Reliability of RF-MEMS for high frequency applications
MENEGHESSO, GAUDENZIO;TAZZOLI, AUGUSTO
2009
Abstract
This Tutorial will review failure modes and mechanisms of GaN HEMTs, identified within the framework of various accelerated tests, including step-stress short tests (< 150 hours) and life tests with a duration exceeding 3000 hours. The proposed methodology includes a detailed characterization of DC electrical characteristics, and analysis of trapping effects by means of pulsed measurements (gate-lag and drain- and gate-double pulse). The observed failure modes are subsequently analyzed by two-dimensional device simulations, in order to validate hypotheses on physical failure mechanisms. Electroluminescence microscopy and spectroscopy is adopted to evaluate hot carrier effects in GaN HEMTs, and as a powerful failure analysis tool, see among othersPubblicazioni consigliate
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