The EOS/ESD sensitivity of the main circuit blocks of a complete GaAs multi-stage power amplifier for microwave applications was investigated under HBM, MM and TLP regimes. Hard breakdown failure modes were identified due to passive components failure. The high current injection state of active components was also analyzed
ESD sensitivity of a GaAs MMIC microwave power amplifier
TAZZOLI, AUGUSTO;ROSSETTO, ISABELLA;ZANONI, ENRICO;MENEGHESSO, GAUDENZIO
2011
Abstract
The EOS/ESD sensitivity of the main circuit blocks of a complete GaAs multi-stage power amplifier for microwave applications was investigated under HBM, MM and TLP regimes. Hard breakdown failure modes were identified due to passive components failure. The high current injection state of active components was also analyzedFile in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
