We have studied the Soft Breakdown (SB) in ultra-thin gate oxides (< 3 nm) subjected to electrical stress. Both SB DC characteristics and current fluctuations are strongly dependent on temperature. The current noise power density follows the 1/f power law. The discrete fluctuations typical of SB have been investigated and modeled as a Poisson Process.

TEMPERATURE DEPENDENCE OF CURRENT NOISE FLUCTUATION OF SOFT BREAKDOWN IN ULTRA-THIN OXIDES

CESTER, ANDREA;PACCAGNELLA, ALESSANDRO;
2000

Abstract

We have studied the Soft Breakdown (SB) in ultra-thin gate oxides (< 3 nm) subjected to electrical stress. Both SB DC characteristics and current fluctuations are strongly dependent on temperature. The current noise power density follows the 1/f power law. The discrete fluctuations typical of SB have been investigated and modeled as a Poisson Process.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2512273
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