We have studied the Soft Breakdown (SB) in ultra-thin gate oxides (< 3 nm) subjected to electrical stress. Both SB DC characteristics and current fluctuations are strongly dependent on temperature. The current noise power density follows the 1/f power law. The discrete fluctuations typical of SB have been investigated and modeled as a Poisson Process.
TEMPERATURE DEPENDENCE OF CURRENT NOISE FLUCTUATION OF SOFT BREAKDOWN IN ULTRA-THIN OXIDES
CESTER, ANDREA;PACCAGNELLA, ALESSANDRO;
2000
Abstract
We have studied the Soft Breakdown (SB) in ultra-thin gate oxides (< 3 nm) subjected to electrical stress. Both SB DC characteristics and current fluctuations are strongly dependent on temperature. The current noise power density follows the 1/f power law. The discrete fluctuations typical of SB have been investigated and modeled as a Poisson Process.File in questo prodotto:
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