In this work we focused our attention on minimum-size MOSFETs, which are the real basic element of all digital CMOS application. The purpose is to evaluate the damage induced by a single or just a few heavy ion strikes on the electrical characteristics of these devices.
Impact of Heavy-Ion Strickes On Minimum size MOSFET with ultra thin gate
BAGATIN, MARTA;CESTER, ANDREA;A. Paccagnella;
2006
Abstract
In this work we focused our attention on minimum-size MOSFETs, which are the real basic element of all digital CMOS application. The purpose is to evaluate the damage induced by a single or just a few heavy ion strikes on the electrical characteristics of these devices.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
