Light emission in submicrometer gate AlGaAs/GaAs HEMTs and GaAs MESFETs has been observed at high drain bias values (>4.0 V). The spectral distribution of the emitted photons in the 1.7-2.9-eV range does not correspond to a simple Maxwellian distribution function of the electron energies in the channel. Light emission is observed in correspondence with nonnegligible gate and substrate hole currents, due to the collection of holes generated by impact ionization.
Light-emission In AlGaAs/GaAs HEMTs and GaAs-MESFETs Induced By Hot Carriers
ZANONI, ENRICO;PACCAGNELLA, ALESSANDRO;
1990
Abstract
Light emission in submicrometer gate AlGaAs/GaAs HEMTs and GaAs MESFETs has been observed at high drain bias values (>4.0 V). The spectral distribution of the emitted photons in the 1.7-2.9-eV range does not correspond to a simple Maxwellian distribution function of the electron energies in the channel. Light emission is observed in correspondence with nonnegligible gate and substrate hole currents, due to the collection of holes generated by impact ionization.File in questo prodotto:
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