Correlation between fabrication process and thermal distribution was evaluated by means of high resolution IR thermography in two 0.5 W MESFET structures, having the same layout but differing in the presence of via hole connections. The via hole structure allows a great improvement in device thermal behaviour, with decrease in Rth and more uniform thermal distribution. The effect of process variations, such as gate misalignments, on temperature distribution within the device active area was also evaluated.
Correlation Between Fabrication Processes and Thermal Distribution In Medium Power Mesfets
ZANONI, ENRICO
1989
Abstract
Correlation between fabrication process and thermal distribution was evaluated by means of high resolution IR thermography in two 0.5 W MESFET structures, having the same layout but differing in the presence of via hole connections. The via hole structure allows a great improvement in device thermal behaviour, with decrease in Rth and more uniform thermal distribution. The effect of process variations, such as gate misalignments, on temperature distribution within the device active area was also evaluated.File in questo prodotto:
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