GaAs MESFET's with non-alloyed ohmic contacts have been achieved through a solid phase reaction of the Ge/Pd/GaAs(xtl) structure upon annealing at 325°C for 30 min. Different Au-based overlayers over Ge/Pd have been tested for device applications and compared with a conventional AuGeNi contact. The thermal stability of the contact resistivity has been evaluated through long-term storages at 300°C.
Non-alloyed Ge/pd Ohmic Contact For Gaas-mesfets
PACCAGNELLA, ALESSANDRO;ZANONI, ENRICO;
1988
Abstract
GaAs MESFET's with non-alloyed ohmic contacts have been achieved through a solid phase reaction of the Ge/Pd/GaAs(xtl) structure upon annealing at 325°C for 30 min. Different Au-based overlayers over Ge/Pd have been tested for device applications and compared with a conventional AuGeNi contact. The thermal stability of the contact resistivity has been evaluated through long-term storages at 300°C.File in questo prodotto:
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