GaAs MESFETs with nonalloyed ohmic contacts, achieved through a solid phase reaction of a Ge/Pd/GaAs (xtl) structure, have been realised and tested at DC and RF. Their contact resistivity and electrical performances are better than those of similar devices with conventional AuGeNi ohmic contacts.
GaAs-MESFETs With Nonalloyed Ohmic Contacts - Technology and Performance
PACCAGNELLA, ALESSANDRO;ZANONI, ENRICO;
1988
Abstract
GaAs MESFETs with nonalloyed ohmic contacts, achieved through a solid phase reaction of a Ge/Pd/GaAs (xtl) structure, have been realised and tested at DC and RF. Their contact resistivity and electrical performances are better than those of similar devices with conventional AuGeNi ohmic contacts.File in questo prodotto:
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