SEM stroboscopic voltage contrast techniques allow one to observe with high voltage resolution the temporal and spatial evolution of latch-up phenomena from the firing event to the final condition. In particular, the authors show by means of an example that in a CMOS IC the firing point may be different from the latch-up site in steady state. Only dynamic observations, therefore, allow a complete understanding of latch-up phenomena and an effective correction of IC layout.
Observation of Latch-up Time Evolution In Cmos Ics By Means of Sem Stroboscopic Voltage Contrast Techniques
ZANONI, ENRICO;
1987
Abstract
SEM stroboscopic voltage contrast techniques allow one to observe with high voltage resolution the temporal and spatial evolution of latch-up phenomena from the firing event to the final condition. In particular, the authors show by means of an example that in a CMOS IC the firing point may be different from the latch-up site in steady state. Only dynamic observations, therefore, allow a complete understanding of latch-up phenomena and an effective correction of IC layout.File in questo prodotto:
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