Emitter Coupled Logic circuits, based on bipolar transistors are extremely fast but involve very high current densities and operating junction temperatures which may lead to circuit failure due to electromigration and interdiffusion effects. Electromigration leads both to the formation of open circuits in the Al-Cu metallizations, and to degradation of ohmic contacts due to accumulation of transported metal material.
Failure mechanisms induced by electromigration in advanced ECL ICs
ZANONI, ENRICO
1983
Abstract
Emitter Coupled Logic circuits, based on bipolar transistors are extremely fast but involve very high current densities and operating junction temperatures which may lead to circuit failure due to electromigration and interdiffusion effects. Electromigration leads both to the formation of open circuits in the Al-Cu metallizations, and to degradation of ohmic contacts due to accumulation of transported metal material.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
