This paper reviews failure modes and mechanisms of GaAs MESFETs and low-noise HEMTs, with particular emphasis on degradation mechanisms of Schottky gate and ohmic metallizations

Failure mechanisms of GaAs MESFETs and low-noise HEMTs

ZANONI, ENRICO
1990

Abstract

This paper reviews failure modes and mechanisms of GaAs MESFETs and low-noise HEMTs, with particular emphasis on degradation mechanisms of Schottky gate and ohmic metallizations
1990
Semiconductor device reliability
0792305361
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2514639
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