A combined experimental and theoretical evaluation of impact ionization effects in AlGaAs HBTs is presented. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which evidences the role of secondary carriers in determining the breakdown voltage. The spectral distribution of the light emitted by the device is analyzed, and its intensity is correlated with base current changes due to impact ionization

Impact ionization and light emission phenomena in AlGaAs/GaAs HBTs

ZANONI, ENRICO;
1992

Abstract

A combined experimental and theoretical evaluation of impact ionization effects in AlGaAs HBTs is presented. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which evidences the role of secondary carriers in determining the breakdown voltage. The spectral distribution of the light emitted by the device is analyzed, and its intensity is correlated with base current changes due to impact ionization
1992
Gallium Arsenide and Related Compounds 1992
075030250X
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2515470
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact