A combined experimental and theoretical evaluation of impact ionization effects in AlGaAs HBTs is presented. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which evidences the role of secondary carriers in determining the breakdown voltage. The spectral distribution of the light emitted by the device is analyzed, and its intensity is correlated with base current changes due to impact ionization
Impact ionization and light emission phenomena in AlGaAs/GaAs HBTs
ZANONI, ENRICO;
1992
Abstract
A combined experimental and theoretical evaluation of impact ionization effects in AlGaAs HBTs is presented. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which evidences the role of secondary carriers in determining the breakdown voltage. The spectral distribution of the light emitted by the device is analyzed, and its intensity is correlated with base current changes due to impact ionizationFile in questo prodotto:
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