Radiation damage of oxygenated silicon diodes by 27 MeV protons

The radiation damage induced by 27 MeV protons has been studied on diodes fabricated from standard and oxygen-enriched FZ substrates. Measurements confirm that the damage constant alpha is insensitive to the oxygen concentration whereas the acceptor creation rate parameter beta is lower for oxygenated diodes. However, the effect is significantly smaller than that observed with high-energy protons, but somewhat higher than that by reactor neutrons. Data have been collected at the irradiation facility of the Tandem at the INFN Laboratories of Legnaro.