Recent studies demonstrated that degradation of InGaN-based laser diodes is due to an increase in non-radiative recombination rate within the active layer of the devices, due to the generation of defects. However, the defects responsible for degradation have not been identified up to now. The aim of this paper is to show – by DLTS - that the degradation of InGaN-based laser diodes is strongly correlated to the increase in the concentration of a deep level located within the active region. The activation energy of the detected deep level is 0.35-0.45 eV. Hypothesis on the nature of this deep level are presented in the paper.

Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS

MENEGHINI, MATTEO;DE SANTI, CARLO;TRIVELLIN, NICOLA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2012

Abstract

Recent studies demonstrated that degradation of InGaN-based laser diodes is due to an increase in non-radiative recombination rate within the active layer of the devices, due to the generation of defects. However, the defects responsible for degradation have not been identified up to now. The aim of this paper is to show – by DLTS - that the degradation of InGaN-based laser diodes is strongly correlated to the increase in the concentration of a deep level located within the active region. The activation energy of the detected deep level is 0.35-0.45 eV. Hypothesis on the nature of this deep level are presented in the paper.
2012
Proceedings of SPIE
9780819489050
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2520956
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