The excellent physical properties of Silicon Carbide make it suitable for high power, high voltage and high temperature applications [1]. In particular, Schottky diodes are very attractive for power switching systems because of their very short turn-off transient which can significantly reduce the power losses [2]. In this paper we present the electrical static and dynamic characterization of SiC Schottky rectifiers built with Ni2Si and Ti metals with very low negative coefficient of breakdown voltage on temperature: this fundamental parameter, which should be positive in order to avoid destructive instabilities and thermal runaway, was reported in literature with opposing results [3-4].
Temperature stability of Breakdown Voltage on SiC power Schottky diodes with different barrier heights
PIEROBON, ROBERTO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2004
Abstract
The excellent physical properties of Silicon Carbide make it suitable for high power, high voltage and high temperature applications [1]. In particular, Schottky diodes are very attractive for power switching systems because of their very short turn-off transient which can significantly reduce the power losses [2]. In this paper we present the electrical static and dynamic characterization of SiC Schottky rectifiers built with Ni2Si and Ti metals with very low negative coefficient of breakdown voltage on temperature: this fundamental parameter, which should be positive in order to avoid destructive instabilities and thermal runaway, was reported in literature with opposing results [3-4].Pubblicazioni consigliate
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