A K-band SiGe bipolar VCO operating from 18.9 to 22.1GHz is presented. The oscillator features a phase noise as low as -136.5 dBc/Hz at 10MHz offset from the 22.1GHz carrierwhile drawing 10mA from the 3.3V supply. The VCO shows a state-of-the-art FOM of -188 dBc/Hz and an excellent FOMT of -192 dBc/Hz. The oscillator is tailored to the communication systems operating in the higher portion of the E-band. It is intended to be followed by a frequency multiplier by four, reported elsewhere.

A SiGe Bipolar VCO for Backhaul E-band Communication Systems

PADOVAN, FABIO;BEVILACQUA, ANDREA;NEVIANI, ANDREA
2012

Abstract

A K-band SiGe bipolar VCO operating from 18.9 to 22.1GHz is presented. The oscillator features a phase noise as low as -136.5 dBc/Hz at 10MHz offset from the 22.1GHz carrierwhile drawing 10mA from the 3.3V supply. The VCO shows a state-of-the-art FOM of -188 dBc/Hz and an excellent FOMT of -192 dBc/Hz. The oscillator is tailored to the communication systems operating in the higher portion of the E-band. It is intended to be followed by a frequency multiplier by four, reported elsewhere.
2012
Proceedings of the European Solid-State Circuits Conference 2012
9781467330855
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2529871
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