In this paper we report briefly on the development of Silicon Photomultipliers at ITC-irst. First, details on the technology and geometry are given. Then, experimental data are shown including static IV characterization, signal characterization, noise properties and photodetection efficiency. © 2006 IEEE.
New results on the characterization of ITC-irst silicon photomultipliers
COLLAZUOL, GIANMARIA;
2007
Abstract
In this paper we report briefly on the development of Silicon Photomultipliers at ITC-irst. First, details on the technology and geometry are given. Then, experimental data are shown including static IV characterization, signal characterization, noise properties and photodetection efficiency. © 2006 IEEE.File in questo prodotto:
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