We describe the characteristics of silicon microstrip sensors fabricated by Hamamatsu Photonics; for the CDF Run 2b silicon detector. A total of 953 sensors, including 117 prototype sensors, have been produced and tested. Five sensors were irradiated with neutrons up to 1.4 x 10(14) n/cm(2) as a part of the sensor quality assurance program. The electrical and mechanical characteristics are found to be superior in all aspects and fulfill our specifications. We comment on charge-up susceptibility of the sensors that employ a <100> crystal structure.

Sensors for the CDF Run2b silicon detector

BISELLO, DARIO;BUSETTO, GIOVANNI;
2004

Abstract

We describe the characteristics of silicon microstrip sensors fabricated by Hamamatsu Photonics; for the CDF Run 2b silicon detector. A total of 953 sensors, including 117 prototype sensors, have been produced and tested. Five sensors were irradiated with neutrons up to 1.4 x 10(14) n/cm(2) as a part of the sensor quality assurance program. The electrical and mechanical characteristics are found to be superior in all aspects and fulfill our specifications. We comment on charge-up susceptibility of the sensors that employ a <100> crystal structure.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2545690
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