In this contribution we investigate in time domain pre-breakdown current fluctuations during the device degradation between Vcrit (≈ -50V for -2V/2min step-stress) and the breakdown voltage (Vbd≈ 80V), as well as post-stress random telegraph signal (RTS) noise in Al0.24Ga0.76N(25nm)/GaN(40nm UID + 3μm C-doped)/SiC HEMTs from FBH.
Pre-breakdown current fluctuations and RTS noise in reverse-bias-stressed AlGaN/GaN HEMTs
MENEGHINI, MATTEO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2012
Abstract
In this contribution we investigate in time domain pre-breakdown current fluctuations during the device degradation between Vcrit (≈ -50V for -2V/2min step-stress) and the breakdown voltage (Vbd≈ 80V), as well as post-stress random telegraph signal (RTS) noise in Al0.24Ga0.76N(25nm)/GaN(40nm UID + 3μm C-doped)/SiC HEMTs from FBH.File in questo prodotto:
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