Although AlGaN/GaN high-electron mobility transistors (HEMTs) have largely demonstrated their potentials in RF power applications, their reliability and performance are often limited by charge trapping effects [1], hence traps characterization is still one of the main research topic for these devices. In this work we present the results of a detailed trap-characterization analysis in AlGaN/GaN HEMTs, and we will provide a consistent localization of said traps by means of drain-current transient measurements.

Traps characterization in AlGaN/GaN HEMTs by means of Drain Current Transient Measurements

BISI, DAVIDE;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2012

Abstract

Although AlGaN/GaN high-electron mobility transistors (HEMTs) have largely demonstrated their potentials in RF power applications, their reliability and performance are often limited by charge trapping effects [1], hence traps characterization is still one of the main research topic for these devices. In this work we present the results of a detailed trap-characterization analysis in AlGaN/GaN HEMTs, and we will provide a consistent localization of said traps by means of drain-current transient measurements.
2012
21th European workshop on Heterostructure Technology, HeTech 2012
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2572830
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