Although AlGaN/GaN high-electron mobility transistors (HEMTs) have largely demonstrated their potentials in RF power applications, their reliability and performance are often limited by charge trapping effects [1], hence traps characterization is still one of the main research topic for these devices. In this work we present the results of a detailed trap-characterization analysis in AlGaN/GaN HEMTs, and we will provide a consistent localization of said traps by means of drain-current transient measurements.
Traps characterization in AlGaN/GaN HEMTs by means of Drain Current Transient Measurements
BISI, DAVIDE;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2012
Abstract
Although AlGaN/GaN high-electron mobility transistors (HEMTs) have largely demonstrated their potentials in RF power applications, their reliability and performance are often limited by charge trapping effects [1], hence traps characterization is still one of the main research topic for these devices. In this work we present the results of a detailed trap-characterization analysis in AlGaN/GaN HEMTs, and we will provide a consistent localization of said traps by means of drain-current transient measurements.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.