We report on an extensive study of single- (SH) and double-heterostructure (DH) HEMTs based on gallium nitride, for power switching applications. The analysis is based on dc, pulsed and breakdown measurements, which were carried out on five different epitaxial structures. © 2013 IEEE.

GaN-HEMTs devices with single- and double-heterostructure for power switching applications

MENEGHESSO, GAUDENZIO;ZANANDREA, ALBERTO;STOCCO, ANTONIO;ROSSETTO, ISABELLA;DE SANTI, CARLO;RAMPAZZO, FABIANA;MENEGHINI, MATTEO;ZANONI, ENRICO;
2013

Abstract

We report on an extensive study of single- (SH) and double-heterostructure (DH) HEMTs based on gallium nitride, for power switching applications. The analysis is based on dc, pulsed and breakdown measurements, which were carried out on five different epitaxial structures. © 2013 IEEE.
2013
2013 IEEE International Reliability Physics Symposium, IRPS 2013
9781479901135
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2693104
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