Conventional InGaAs/InAlAs pHEMTs, which work mostly in depletion mode, are limited by their high power consumption and requirements for a negative voltage supply. The realization of reliable enhancement mode pHEMTs (E-pHEMTs) using all postive supplies has proven difficult so far. Previously, E-pHEMTs have been reported using platinum (Pt) and palladium (Pd) gate metallization diffusion on GaAs based pHEMTs, and also by using Pt gate on InP based pHEMTs, but no Pd gate on InP based pHEMTs has been reported to date. In this work, we have investigated a novel quasi-enhancement mode Pd gate delta-doped InGaAs/InAlAs pHEMT, which has the advantages of high breakdown voltage.
Effects of Thermal Annealing on Current Degradation in Enhancement Mode Pd gate InAlAs/InGaAs/InP pHEMTs
BISI, DAVIDE;CHINI, ALESSANDRO;
2011
Abstract
Conventional InGaAs/InAlAs pHEMTs, which work mostly in depletion mode, are limited by their high power consumption and requirements for a negative voltage supply. The realization of reliable enhancement mode pHEMTs (E-pHEMTs) using all postive supplies has proven difficult so far. Previously, E-pHEMTs have been reported using platinum (Pt) and palladium (Pd) gate metallization diffusion on GaAs based pHEMTs, and also by using Pt gate on InP based pHEMTs, but no Pd gate on InP based pHEMTs has been reported to date. In this work, we have investigated a novel quasi-enhancement mode Pd gate delta-doped InGaAs/InAlAs pHEMT, which has the advantages of high breakdown voltage.Pubblicazioni consigliate
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