Being able to spatially localize trapping phenomena that are limiting GaN HEMTs operation is a mandatory task in order to successfully improve their performances. In this work it will be shown that a simple technique based on the measurements of the drain current dispersion under pulsed operation can be successfully used in order to localize buffer or surface/barrier traps states. A physical explanation supporting the experimental results as well as 2D numerical simulations will also be presented.
Experimental Technique for Traps Spatial Localization in GaN HEMTs
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2013
Abstract
Being able to spatially localize trapping phenomena that are limiting GaN HEMTs operation is a mandatory task in order to successfully improve their performances. In this work it will be shown that a simple technique based on the measurements of the drain current dispersion under pulsed operation can be successfully used in order to localize buffer or surface/barrier traps states. A physical explanation supporting the experimental results as well as 2D numerical simulations will also be presented.File in questo prodotto:
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