Measurements of resonant electron attachment to O2 impurities in dense Ne gas at moderately low temperature T=80 K are here reported. The density-normalized attachment frequency shows a peak at a specific density. The present data are compared to previous results obtained in dense He gas at similar temperatures. Similarly to the He case, the present data are explained by assuming that the dense environment affects the energetics of the quasi-free electrons.

Resonant Electron Attachment to Oxygen Impurities in Dense Neon Gas

BORGHESANI, ARMANDO-FRANCESCO
2014

Abstract

Measurements of resonant electron attachment to O2 impurities in dense Ne gas at moderately low temperature T=80 K are here reported. The density-normalized attachment frequency shows a peak at a specific density. The present data are compared to previous results obtained in dense He gas at similar temperatures. Similarly to the He case, the present data are explained by assuming that the dense environment affects the energetics of the quasi-free electrons.
2014
2014 IEEE International Conference on Liquid Dielectrics
9781479920648
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2886698
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