Thin-film transistors have been fabricated on a CdSe stoichiometric semiconductor film deposited by using RF magnetron sputtering from a CdSe target. The main features and the characteristic data of such transitions realized are presented. The threshold voltage Vt=4 V, the field-effect mobility μ=45 cm2 /V-s, and the switching current ratio ION/IOFF=5×107. These values are comparable to those obtained for similar devices fabricated on evaporated CdSe films
Thin-film transistors with sputtered CdSe as semiconductor
PACCAGNELLA, ALESSANDRO
1989
Abstract
Thin-film transistors have been fabricated on a CdSe stoichiometric semiconductor film deposited by using RF magnetron sputtering from a CdSe target. The main features and the characteristic data of such transitions realized are presented. The threshold voltage Vt=4 V, the field-effect mobility μ=45 cm2 /V-s, and the switching current ratio ION/IOFF=5×107. These values are comparable to those obtained for similar devices fabricated on evaporated CdSe filmsFile in questo prodotto:
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