The density and the average penetration depth of acceptors near the semiconductor surface were calculated from C-V and J-V measurements on p+/n Shannon structures. The WNX / GaAs diodes were fabricated using chemically and plasma cleaned GaAs surfaces and annealed at several temperatures. It was found that the semiconductor surface cleaning before metal deposition is a key factor to control the rectifying properties of this type of metal / semiconductor contact.
SURFACE CHARACTERISTICS OF PLASMA TREATED WNX/GAAS CONTACTS FROM C-V MEASUREMENTS
PACCAGNELLA, ALESSANDRO;
1990
Abstract
The density and the average penetration depth of acceptors near the semiconductor surface were calculated from C-V and J-V measurements on p+/n Shannon structures. The WNX / GaAs diodes were fabricated using chemically and plasma cleaned GaAs surfaces and annealed at several temperatures. It was found that the semiconductor surface cleaning before metal deposition is a key factor to control the rectifying properties of this type of metal / semiconductor contact.File in questo prodotto:
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