Frequency dispersion of transconductance g(m)(f) has been exploited to quantitatively investigate the properties of deep traps in III-V FET devices, namely DX centres in GaAs/AlGaAs HEMTs. This method requires simple data acquisition and elaboration and is applied directly to packaged devices. Thermal emission energy E(a) = 0.46 eV and capture cross-section sigma = 3.10(-14) cm2 have been obtained for DX centers in AlGaAs, in good agreement with published data. By increasing V(DS), we measured also an E(a) decrease due to hot electron trapping by the DX centres.

Frequency dispersion of transconductance: a tool to characterise deep levels in III-V FETs

PACCAGNELLA, ALESSANDRO;
1992

Abstract

Frequency dispersion of transconductance g(m)(f) has been exploited to quantitatively investigate the properties of deep traps in III-V FET devices, namely DX centres in GaAs/AlGaAs HEMTs. This method requires simple data acquisition and elaboration and is applied directly to packaged devices. Thermal emission energy E(a) = 0.46 eV and capture cross-section sigma = 3.10(-14) cm2 have been obtained for DX centers in AlGaAs, in good agreement with published data. By increasing V(DS), we measured also an E(a) decrease due to hot electron trapping by the DX centres.
1992
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3105709
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