The influence of deep levels on AlGaAs/GaAs HEMTs operation has been evaluated from the transconductance frequency dispersion and the low frequency channel noise analysis. The LF noise level of damaged devices has been shown to increase after hot electron aging tests.
INVESTIGATIONS ON THE ORIGIN OF ALGAAS-GAAS HEMTS LF CHANNEL NOISE
PACCAGNELLA, ALESSANDRO;
1992
Abstract
The influence of deep levels on AlGaAs/GaAs HEMTs operation has been evaluated from the transconductance frequency dispersion and the low frequency channel noise analysis. The LF noise level of damaged devices has been shown to increase after hot electron aging tests.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
