Semi-insulating gallium arsenide has been irradiated by protons and by gamma-rays with different doses. The irradiation-induced deep level defects have been investigated by current transient spectroscopy to find their energy, capture cross sections and generation rate.Two electron traps at Ec+0.14eV(E13) and Ec-0.70eV(E4) and a hole trap at Ec-0.14eV(H2) in addition to the levels existing before the irradiation have been detected in the irradiated samples. These findings have been related to the performance of gallium arsenide charge particle detectors.
Defects induced by protons and gamma-rays in semi-insulating GaAs detectors
PACCAGNELLA, ALESSANDRO;
1995
Abstract
Semi-insulating gallium arsenide has been irradiated by protons and by gamma-rays with different doses. The irradiation-induced deep level defects have been investigated by current transient spectroscopy to find their energy, capture cross sections and generation rate.Two electron traps at Ec+0.14eV(E13) and Ec-0.70eV(E4) and a hole trap at Ec-0.14eV(H2) in addition to the levels existing before the irradiation have been detected in the irradiated samples. These findings have been related to the performance of gallium arsenide charge particle detectors.
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