The reactor (100) for deposition of layers of semiconductor material on substrates, comprises: a reaction chamber (110), a susceptor assembly (120) located inside the reaction chamber, and a heating system (130) adapted to heat the susceptor assembly by electromagnetic induction; the heating system (130) comprises a first (131) inductor and a second (132) inductor and a power supply (135) adapted to electrically feed the first and second inductors (131, 132) with alternating currents that are...
The present invention concerns a susceptor comprising a disc-shaped portion (21) and a cylindrical or conical portion (22); the disc-shaped portion (21) is used to (directly or indirectly) support one or more substrates to be subjected to epitaxial deposition inside a reaction chamber of an epitaxial deposition reactor; the cylindrical or conical portion (22) is used to contribute to the heating of the disc-shaped portion (21); thanks to the configuration of the susceptor, it is possible to h...