We present results from a combined experimental and numerical investigation of trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes. We show that the excess forward leakage current in single-quantum-well InGaN/GaN light-emitting diodes can be explained by non-local tunneling-into-traps processes and subsequent non-radiative recombination with free carriers. © 2015 SPIE.

Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes

MENEGHINI, MATTEO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2015

Abstract

We present results from a combined experimental and numerical investigation of trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes. We show that the excess forward leakage current in single-quantum-well InGaN/GaN light-emitting diodes can be explained by non-local tunneling-into-traps processes and subsequent non-radiative recombination with free carriers. © 2015 SPIE.
2015
Proceedings of SPIE - The International Society for Optical Engineering - Volume 9571 - Volume 9571
978-162841737-1
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3184990
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