We present results from a combined experimental and numerical investigation of trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes. We show that the excess forward leakage current in single-quantum-well InGaN/GaN light-emitting diodes can be explained by non-local tunneling-into-traps processes and subsequent non-radiative recombination with free carriers. © 2015 SPIE.
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes
MENEGHINI, MATTEO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2015
Abstract
We present results from a combined experimental and numerical investigation of trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes. We show that the excess forward leakage current in single-quantum-well InGaN/GaN light-emitting diodes can be explained by non-local tunneling-into-traps processes and subsequent non-radiative recombination with free carriers. © 2015 SPIE.File in questo prodotto:
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