A Matching Network for a 1.1V Switched Capacitor Power Amplifier has been designed with a Bluetooth Application in mind. The Matching Network has been implemented in a 28nm CMOS RF Metal Stack and provides 16.7dBm output power with IL = 1.1dB at 2.4GHz. A detailed analytical model of power and efficiency of the Matching Network is derived and used for optimal design of the Matching Network. The model shows very good agreement with circuit simulations, and good matching with experimental data as well.

Analysis and design of a 1.1dB-IL third-order Matching Network for Switched-Capacitor PAs

PASSAMANI, ANTONIO;BEVILACQUA, ANDREA
2015

Abstract

A Matching Network for a 1.1V Switched Capacitor Power Amplifier has been designed with a Bluetooth Application in mind. The Matching Network has been implemented in a 28nm CMOS RF Metal Stack and provides 16.7dBm output power with IL = 1.1dB at 2.4GHz. A detailed analytical model of power and efficiency of the Matching Network is derived and used for optimal design of the Matching Network. The model shows very good agreement with circuit simulations, and good matching with experimental data as well.
2015
2015 Nordic Circuits and Systems Conference, NORCAS 2015: NORCHIP and International Symposium on System-on-Chip, SoC 2015
WOS:000380441400014
2-s2.0-84963720083
9781467365765
9781467365765
04.01 - Contributo in atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3189841
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