We evaluate the total ionizing dose (TID) responses of InGaAs nMOS FinFETs with different gate lengths irradiated with 10-keV X-rays under different gate biases. The largest degradation after irradiation occurs at V G = -1 V. Radiation-induced trapped positive charge dominates the TID response of InGaAs FinFET transistors, consistent with previous results for InGaAs multifin capacitors. Shorter gate-length devices show larger radiation-induced charge trapping than longer gate-length devices, most likely due to the electrostatic effects of trapped charge in the surrounding SiO 2 isolation and SiO 2 /Si 3 N 4 spacer oxides. The 1/f noise measurements indicate a high trap density and a nonuniform defect-energy distribution, consistent with a strong variation of effective border-trap density with surface potential.
Gate Bias and Length Dependences of Total-Ionizing-Dose Effects in InGaAs FinFETs on Bulk Si
Bonaldo S.;Gerardin S.;Paccagnella A.;
2019
Abstract
We evaluate the total ionizing dose (TID) responses of InGaAs nMOS FinFETs with different gate lengths irradiated with 10-keV X-rays under different gate biases. The largest degradation after irradiation occurs at V G = -1 V. Radiation-induced trapped positive charge dominates the TID response of InGaAs FinFET transistors, consistent with previous results for InGaAs multifin capacitors. Shorter gate-length devices show larger radiation-induced charge trapping than longer gate-length devices, most likely due to the electrostatic effects of trapped charge in the surrounding SiO 2 isolation and SiO 2 /Si 3 N 4 spacer oxides. The 1/f noise measurements indicate a high trap density and a nonuniform defect-energy distribution, consistent with a strong variation of effective border-trap density with surface potential.Pubblicazioni consigliate
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