This letter presents a dc-dc converter realized in a 130-nm CMOS technology that features the same conversion gain as a standard boost converter,but it is able to process a dual polarity input with a magnitude down to 60 mV. The circuit prototypes feature a regulated output voltage of 1.2 V,an efficiency up to 88% and a maximum output power of 6 mW,while limiting the number of required off-chip components to two capacitors and one inductor.

A 130-nm CMOS Dual Input-Polarity DC-DC Converter for Low-Power Applications

Gatti A.;Spiazzi G.;Gerosa A.;Neviani A.;Bevilacqua A.
2019

Abstract

This letter presents a dc-dc converter realized in a 130-nm CMOS technology that features the same conversion gain as a standard boost converter,but it is able to process a dual polarity input with a magnitude down to 60 mV. The circuit prototypes feature a regulated output voltage of 1.2 V,an efficiency up to 88% and a maximum output power of 6 mW,while limiting the number of required off-chip components to two capacitors and one inductor.
2019
ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference
978-1-7281-1550-4
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3337873
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 3
social impact