When an energetic ion strikes a microelectronic device it induces current transients that may lead to a variety of undesirable Single Event Effects (SEE). An important part of the activity of the SIRAD heavy ion facility at the 15 MV Tandem accelerator of the INFN Laboratories of Legnaro (Italy) concerns SEE studies of microelectronic devices destined for radiation hostile environments. An Ion Electron Emission Microscope (IEEM) is working at the SIRAD facility. In the IEEM technique, a broad ion beam irradiates a device under test (DUT) and the secondary electrons emitted by the target surface by each ion impact are collected and focused by a commercial electron emission microscope onto a fast electron detector. The spatial (x and y coordinates) and the temporal information of the ion impacts are then correlated to the SEE induced in the device under test and a SEE sensitivity map is obtained. An IEEM can achieve resolutions better than 1um, comparable to the ones achieved by nuclear microprobes techniques where the DUT is systematically scanned with micrometric precision with a microfocused beam. For a heavy ion microbeam to work one must meet severe requirements in terms of beam monochromaticity and stability. The IEEM poses no such requests. In this thesis we describe in detail the IEEM apparatus working at SIRAD facility and the performed experiments, with an initial discussion on the physical aspects involved in radiation hardness testing.

Performances of the Ion Electron Emission Microscope at SIRAD / Mattiazzo, Serena. - (2008).

Performances of the Ion Electron Emission Microscope at SIRAD

Mattiazzo, Serena
2008

Abstract

When an energetic ion strikes a microelectronic device it induces current transients that may lead to a variety of undesirable Single Event Effects (SEE). An important part of the activity of the SIRAD heavy ion facility at the 15 MV Tandem accelerator of the INFN Laboratories of Legnaro (Italy) concerns SEE studies of microelectronic devices destined for radiation hostile environments. An Ion Electron Emission Microscope (IEEM) is working at the SIRAD facility. In the IEEM technique, a broad ion beam irradiates a device under test (DUT) and the secondary electrons emitted by the target surface by each ion impact are collected and focused by a commercial electron emission microscope onto a fast electron detector. The spatial (x and y coordinates) and the temporal information of the ion impacts are then correlated to the SEE induced in the device under test and a SEE sensitivity map is obtained. An IEEM can achieve resolutions better than 1um, comparable to the ones achieved by nuclear microprobes techniques where the DUT is systematically scanned with micrometric precision with a microfocused beam. For a heavy ion microbeam to work one must meet severe requirements in terms of beam monochromaticity and stability. The IEEM poses no such requests. In this thesis we describe in detail the IEEM apparatus working at SIRAD facility and the performed experiments, with an initial discussion on the physical aspects involved in radiation hardness testing.
Ion Electron Emission Microscopy, radiation hardness
Performances of the Ion Electron Emission Microscope at SIRAD / Mattiazzo, Serena. - (2008).
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/3425031
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