Carbon ions were implanted into nickel films to facilitate growth of few-layered graphene. After vacuum annealing at 950°C, G and 2D peaks were seen in micro-Raman measurements of the nickel film. No D peak, which is associated with sp3 adsorbates and vacancies/defects in graphene, was observed. © 2012 IEEE.
Few-layered graphene growth by carbon implantation into polycrystalline nickel substrate
Soncini A.;
2012
Abstract
Carbon ions were implanted into nickel films to facilitate growth of few-layered graphene. After vacuum annealing at 950°C, G and 2D peaks were seen in micro-Raman measurements of the nickel film. No D peak, which is associated with sp3 adsorbates and vacancies/defects in graphene, was observed. © 2012 IEEE.File in questo prodotto:
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