B4C optical coating represents, together with Ir, Pt, SiC, one of best choice for high reflectance in the extreme ultraviolet region (EUV 160-30 nm). This material is also used in multilayer for soft X-ray applications, such as Si/B4C or W/B4C, or as interlayer in Mo/Si multilayer to avoid interdiffusion also because of its high thermal stability. Our work concerns on B4C thin films deposited on Si [100] substrates by means of three different deposition techniques: RF plasma magnetron sputtering, e-beam evaporation, pulsed laser ablation (PLD). We performed reflectance vs incidence angle measurements from 5 nm to 152 nm on different samples deriving the optical constants with a least-square fitting method. Complete films characterization have been carried out with compositional (XPS), structural (XRD) and morphological (AFM, SEM) analyses.

Optical constants in the EUV Soft x-ray (5 divided by 152 nm) spectral range of B4C thin films deposited by different deposition techniques

Garoli, D;Frison, R;Mattarello, V;Pelizzo, MG;Armelao, L;
2006

Abstract

B4C optical coating represents, together with Ir, Pt, SiC, one of best choice for high reflectance in the extreme ultraviolet region (EUV 160-30 nm). This material is also used in multilayer for soft X-ray applications, such as Si/B4C or W/B4C, or as interlayer in Mo/Si multilayer to avoid interdiffusion also because of its high thermal stability. Our work concerns on B4C thin films deposited on Si [100] substrates by means of three different deposition techniques: RF plasma magnetron sputtering, e-beam evaporation, pulsed laser ablation (PLD). We performed reflectance vs incidence angle measurements from 5 nm to 152 nm on different samples deriving the optical constants with a least-square fitting method. Complete films characterization have been carried out with compositional (XPS), structural (XRD) and morphological (AFM, SEM) analyses.
2006
Proceedings of SPIE - The International Society for Optical Engineering. In in X-Ray/EUV Optics, Components and Applications
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3456840
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