A 5.1–10.5 GHz SiGe BiCMOS Power Amplifier for 6GNR with 29 dBm PSAT and 40.1% PAE

This work presents a Watt-level 2-stage differential power amplifier (PA) implemented in a 130nm SiGe BiCMOS technology. The PA leverages a stacked topology to achieve large power over a wide bandwidth while employing only low-voltage high-speed bipolar devices and using a 3.3V supply. The measured small signal gain is 34.2 dB, with a 3 dB bandwidth ranging from 4 to 11 GHz, resulting in a large coverage of the 6G new radio (NR) FR3 spectrum. The saturated power is 29dBm with a peak power added efficiency larger than 40%. The PA is tested with a 5G NR-FR1 modulation, achieving 6.4% EVM and -33 dBc ACLR with 15.6% PAE at 21.5dBm average output power.