We describe an innovative family of photodiodes based on a-Si:H/a-SiC:H p-i-n junction grown by Glow Discharge. The aim of this technology is to realize two-dimensional detector arrays on cheap substrates such as glass or flexible materials. Their spectral response can be tuned during the growing process to have high sensitivity in the ultraviolet and vacuum ultraviolet ranges, selecting the absorption profile in the semiconductor and the film thickness. We have performed a set of measurements at room temperature to characterize the visible and UV response of a first generation prototype, having a sensitive area of 0.17 cm2, and an improved second generation optimized for UV photon detection.
Amorphous silicon thin film as tuneable and high sensitive photodetector in the UV and far UV spectral range
NALETTO, GIAMPIERO;NICOLOSI, PIERGIORGIO;
1997
Abstract
We describe an innovative family of photodiodes based on a-Si:H/a-SiC:H p-i-n junction grown by Glow Discharge. The aim of this technology is to realize two-dimensional detector arrays on cheap substrates such as glass or flexible materials. Their spectral response can be tuned during the growing process to have high sensitivity in the ultraviolet and vacuum ultraviolet ranges, selecting the absorption profile in the semiconductor and the film thickness. We have performed a set of measurements at room temperature to characterize the visible and UV response of a first generation prototype, having a sensitive area of 0.17 cm2, and an improved second generation optimized for UV photon detection.
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