Deep submicron CMOS technologies for the LHC experiments

Jarron, P.; Anelli, G.; Calin, T.; Cosculluela, J.; Campbell, M.; Delmastro, M.; Faccio, F.; Giraldo, A.; Heijne, E.; Kloukinas, K.; Letheren, M.; Nicolaidis, M.; Moreira, P.; Paccagnella, Alessandro; Marchioro, A.; Snoeys, W.; Velazco, R.

doi:10.1016/S0920-5632(99)00615-5

The harsh radiation environment at the Large Hadron Collider (LHC) requires radiation hard ASICs. This paper presents how a high tolerance for total ionizing dose can be obtained in commercial deep submicron technologies by using enclosed NMOS devices and guard rings. The method is explained, demonstrated on transistor and circuit level, and design implications are discussed. A model for the effective W/L of an enclosed transistor is given, a radiation-tolerant standard cell library is presented, and single event effects are discussed.

Titolo:	Deep submicron CMOS technologies for the LHC experiments
Autori:	Jarron P. Anelli G. Calin T. Cosculluela J. Campbell M. Delmastro M. Faccio F. Giraldo A. Heijne E. Kloukinas K. Letheren M. Nicolaidis M. Moreira P. PACCAGNELLA, ALESSANDRO Marchioro A. Snoeys W. Velazco R. mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	1999
Rivista:	NUCLEAR PHYSICS. B
Abstract:	The harsh radiation environment at the Large Hadron Collider (LHC) requires radiation hard ASICs. This paper presents how a high tolerance for total ionizing dose can be obtained in commercial deep submicron technologies by using enclosed NMOS devices and guard rings. The method is explained, demonstrated on transistor and circuit level, and design implications are discussed. A model for the effective W/L of an enclosed transistor is given, a radiation-tolerant standard cell library is presented, and single event effects are discussed.
Handle:	http://hdl.handle.net/11577/130250
Appare nelle tipologie:	01.01 - Articolo in rivista

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